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By Constantinides Constantinos

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26. T. Yamane, H. Murakami, Y. Kangawa, Y. Kumagai, and A. Koukitu, Growth of thick AIN layer on sapphire (0001) substrate using hydride vapor phase epitaxy, Phys. Stat. Sol. (c) 2, 2062-2065 (2005). 27. A. Nikolaev, I. Nikitina, A. Zubrilov, M. Mynbaeva, Yu. Melnik, V. Dmitriev, AIN wafers fabricated by hydride vapor phase epitaxy, Mat. Res. Soc. Symp. 5(2000). 28. Yu. Melnik, D. Tsvetkov, A. Pechnikov, I. Nikitina, N. Kuznetsov, V. Dmitriev, Characterization of AIN/SiC epitaxial wafers fabricated by hydride vapour phase epitaxy, Phys.

25. 29 SMS depth analysis of another HVPE grown AlGaN/GaN/AlGaN double heterostructure is given in Fig. 25. GaN well was of about 20 nm thick. 3. 20 First, undoped GaN layer was grown directly on 6H-SiC substrate. Than Mg was introduced as an acceptor dopant to grow p-type GaN layer. The Mg atomic concentration ranged for 20 different samples from 5x10 to 5x10 cm". Mesa diodes with a Hydride Vapor Phase Epitaxy: III- Nitrides 25 vertical current flow geometry were formed by reactive ion etching.

Thomson, and D. Look made these developments possible. We thank Lehighton Electronics, Inc Candela, and Accent Optical Technologies for their help in material investigation. Encouraging and governing discussions with C. Wood, M. Yoder, and J. Carrano and their support were very important for this work. Financial support for HVPE development at TDI was provided by the Department of Defense, Department of Energy, and Department of Commerce. References 1. P. J. Tietjen, The preparation and properties of vapor-deposited single-crystalline GaN, Appl.

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AOP considered harmful by Constantinides Constantinos


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